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Table 2 Comparisons different multilevel inverter topologies

From: A comprehensive survey on reduced switch count multilevel inverter topologies and modulation techniques

References

No of Switches

Techniques implemented

Symmetrical/asymmetrical/both

Merits

Demerits

MLDC [6]

m + 3

PWM switching angle

Both

Makes use of fewer semiconductor switches

Optimum circuit design

There is no need for additional clamping diodes or capacitors

Expenses are high since storage capacitors are used

Reduced device count causes a rise in power rating, which damages the device

SSPS [8]

2n + 4(U)

PD-SPWM

Both

Uncomplicated design

It is feasible to distribute loads uniformly

Able to run as a single DC source configuration

Requires fewer gate driver circuits

Inapplicable to fault-tolerant operations and unable to function as an asymmetric configuration

T-type [11]

4(U), n − 1(B)

FPGA

Symmetrical

The supervised structure is straightforward

Diodes and capacitors are not necessary

Switching losses are substantial

Low efficiency is the outcome of a high-frequency operation

Cannot be used for applications requiring high voltage and/or power

Crisscross [13]

3n + 4

Vertical-phase-shifted SPWM strategy

Both

The system has low PIV

The capacity to function with both negative and positive voltage

Switches that can operate in both directions are necessary

Operation requires an isolated input DC-link

RV [15]

2n + 4(U)

PD-SPWM

Both

DC-links that are not isolated are used

Peak voltage and switching frequency are used to operate rated switches

Non-uniform load sharing

Low levels of redundancy

SCSS [17]

2n + 4(U)

PWM switching angle

Symmetrical

A flexible framework

Maximum voltage and switching frequency are supported by rated switches

Each switch has a different rating of voltage, which results in uneven load sharing

MLM [18]

4(U), n + 1(B)

Fundamental frequency switching technique

Symmetrical

Can function with fewer DC source voltages

Needs smaller amount of power diodes, transistors, and semiconductor switches

Flops when used in an asymmetrical arrangement

Separate DC sources are necessary

2SELG [20]

2n + 4

Staircase control method

Symmetrical

Only a few switches are required

Uncomplicated structure

Does not work at the basic switching frequency

Intricate control

Needs separate DC sources

Cross-connected [22]

2n + 2(U)

Multicarrier PWM scheme

Both

Need fewer switching devices and fundamental sub-inverter cells

For a specific level, it requires the least blocking voltage

Only works with solitary DC sources

A need for on-state switches

Not very economical

PUC [23]

2n + 2(U)

Sinusoidal PWM modulator

Both

The architecture is straightforward

The potential for further crossover switches

Various switches have varying voltage ratings

Applications that can tolerate errors cannot exist

Implementation expenses are higher

CBSC [24]

2n + 2(B)

Fundamental frequency switching technique

Both

Decreased operating costs

Basic circuit

Not possible to use asymmetric topology

E-type [25]

6n(U), 2n(B)

Selective harmonics pulse width modulation

Asymmetrical

Absolute asymmetry

Switching redundancies are produced through cascading

Significant device decrease

Voltage balancing with DC-link is challenging

ST-type [26]

6n(U), 3n(B)

Nearest level control

Asymmetrical

Switch count is lower than for the E-type

Notable device reduction